? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c, r gs = 1m 100 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 80 a i dm t c = 25 c, pulse width limited by t jm 220 a i a t c = 25 c25a e as t c = 25 c 400 mj p d t c = 25 c 230 w dv/dt i s i dm , v dd v dss , t j 175c 10 v/ns t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g ds99648a(11/09) IXTA80N10T ixtp80n10t v dss = 100v i d25 = 80a r ds(on) 14m trenchmv tm power mosfet g = gate d = drain s = source tab = drain to-263 aa (ixta) g d s to-220ab (ixtp) d (tab) g s d (tab) n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 105 v v gs(th) v ds = v gs , i d = 100 a 2.5 5.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = 105v, v gs = 0v 5 a t j = 150 c 150 a r ds(on) v gs = 10v, i d = 25a, note 1 & 2 14 m features z international standard packages z 175c operating temperature z avalanche rated z high current handling capability z fast intrinsic diode z low r ds(on) advantages z easy to mount z space savings z high power density applications z automotive - motor drives - dc/dc conversion - 42v power bus - abs systems z dc/dc converters and off-line ups z primary switch for 24v and 48v systems z high current switching applications z distributed power architechtures and vrms z electronic valve train systems
IXTA80N10T ixtp80n10t ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes 1. pulse test, t 300 s, duty cycle, d 2%. 2. on through-kole packages r ds(on) kelvin test contact location must be 5 mm or less from the package body. symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 33 55 s c iss 3040 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 420 pf c rss 90 pf t d(on) 31 ns t r 54 ns t d(off) 40 ns t f 48 ns q g(on) 60 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 25a 21 nc q gd 15 nc r thjc 0.65 c/w r thcs 0.50 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 80 a i sm repetitive, pulse width limited by t jm 220 a v sd i f = 25a, v gs = 0v, note 1 1.1 v t rr 100 ns i f = 25a, -di/dt = 100a/ s v r = 50v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 10a r g = 15 (external) to-220 (ixtp) outline pins: 1 - gate 2 - drain 3 - source 4 - drain to-263 (ixta) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005 1. gate 2. drain 3. source
? 2009 ixys corporation, all rights reserved IXTA80N10T ixtp80n10t fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v fig. 2. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 240 280 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 10v 6v 7v 8v 9v fig. 3. output characteristics @ t j = 150oc 0 10 20 30 40 50 60 70 80 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 5v 7v fig. 4. r ds(on) normalized to i d = 40a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 80a i d = 40a fig. 5. r ds(on) normalized to i d = 40a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 0 25 50 75 100 125 150 175 200 225 250 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes
IXTA80N10T ixtp80n10t ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance 0 20 40 60 80 100 120 140 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 0 20406080100120140160 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 40 80 120 160 200 240 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 55 60 q g - nanocoulombs v gs - volts v ds = 50v i d = 25a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2009 ixys corporation, all rights reserved ixys ref: t_80n10t(3v)12-11-07-a IXTA80N10T ixtp80n10t fig. 14. resistive turn-on rise time vs. drain current 35 40 45 50 55 60 65 70 75 80 10 12 14 16 18 20 22 24 26 28 30 i d - amperes t r - nanoseconds r g = 15 ? , v gs = 10v v ds = 50v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 0 40 80 120 160 200 240 280 15 20 25 30 35 40 45 50 55 r g - ohms t r - nanoseconds 25 35 45 55 65 75 85 95 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 30a i d = 10a fig. 16. resistive turn-off switching times vs. junction temperature 39 40 41 42 43 44 45 46 47 48 49 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 36 40 44 48 52 56 60 64 68 72 76 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 15 ? , v gs = 10v v ds = 50v i d = 10a i d = 30a fig. 17. resistive turn-off switching times vs. drain current 38 40 42 44 46 48 50 10 12 14 16 18 20 22 24 26 28 30 i d - amperes t f - nanoseconds 30 38 46 54 62 70 78 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 15 ? , v gs = 10v v ds = 50v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 35 40 45 50 55 60 65 70 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 15 ? , v gs = 10v v ds = 50v i d = 30a i d = 10a fig. 18. resistive turn-off switching times vs. gate resistance 40 60 80 100 120 140 160 15 20 25 30 35 40 45 50 55 r g - ohms t f - nanoseconds 30 70 110 150 190 230 270 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 30a i d = 10a
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